Temperature induced complementary switching in titanium oxide resistive random access memory
نویسندگان
چکیده
منابع مشابه
Bipolar resistive switching of chromium oxide for resistive random access memory
This study investigates the resistance switching characteristics of Cr2O3-based resistance random access memory (RRAM) with Pt/Cr2O3/TiN and Pt/Cr2O3/Pt structures. Only devices with Pt/Cr2O3/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr2O3 and TiN was observed ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4959799